Status of WBG Wide Bandgap Device Reliability in Automotive (U. Bremen et al.)
Summary
A multi-institution research paper on wide bandgap (WBG) semiconductor reliability for automotive applications has been published by a consortium including BMW, Robert Bosch GmbH, Infineon, and Semikron Danfoss alongside three German universities. The paper examines the reliability characteristics of SiC and GaN devices relative to silicon counterparts in automotive use cases. The collaboration between OEMs, Tier 1 suppliers, and device manufacturers signals coordinated industry effort to qualify WBG components for series production.
Why It Matters
For manufacturers producing EV powertrains, inverters, and onboard charging systems, WBG device reliability is a direct production and supply chain concern. SiC MOSFETs and GaN devices enable higher switching frequencies, reduced thermal management hardware, and improved power density, but their qualification under automotive stress conditions—thermal cycling, cosmic ray immunity, gate oxide stability—directly affects bill of materials decisions, supplier qualification timelines, and warranty exposure. The involvement of BMW and Bosch alongside device suppliers Infineon and Semikron Danfoss suggests that OEM-driven reliability standards for WBG components are converging, which will likely accelerate AQG 324 and similar qualification spec adoption across Tier 1 and Tier 2 suppliers. Manufacturers still designing around silicon IGBTs face increasing competitive pressure to qualify SiC-based designs, requiring investment in updated test equipment, process controls, and supplier qualification infrastructure.